Instabillities in silicon devices
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Published by North-Holland in Amsterdam, Oxford .
Written in English

Subjects:

  • Semiconductors.,
  • Silicon -- Electric properties.

Book details:

Edition Notes

Statementedited by Gérard Barbottin and André Vapaille. Vol.1.
ContributionsBarbottin, Gérard, 1946-, Vapaille, André, 1933-
Classifications
LC ClassificationsTK7871.85
The Physical Object
Paginationxxiv,517p. :
Number of Pages517
ID Numbers
Open LibraryOL21438397M
ISBN 100444879447

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These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Instabilities in Silicon Devices: Silicon Passivation and Related Instabilities Hardcover – January 1, by André Barbottin, Gérard; Vapaille (Author)Author: André Barbottin, Gérard; Vapaille. Search in this book series. New Insulators, Devices and Radiation Effects. Edited by Gérard Barbottin, André Vapaille. Volume 3, Pages () List of errata to volume 1 of instabilities in silicon devices silicon passivation and related instabilities Pages Download PDF;. Instabilities in Silicon Devices. Country: United States - SIR Ranking of United States: 4. H Index. Subject Area and Category: Engineering Electrical and Electronic Engineering Materials Science Electronic, Optical and Magnetic Materials: Publisher: JAI Press: Publication type: Book Series: ISSN: Coverage:

  Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Abstract: In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power by: TY - BOOK. T1 - Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. AU - Reigosa, Paula Diaz. N1 - PhD supervisor: Prof. Francesco Iannuzzo, Aalborg University, Denmark Assistant PhD supervisor: Prof. Frede Blaabjerg, Aalborg University, DenmarkCited by: 1.   Plasma and Current Instabilities in Semiconductors details the main ideas in the physics of plasma and current instabilities in semiconductors. The title first covers plasma in semiconductors, and then proceeds to tackling waves in plasma. Next, the selection details wave instabilities in plasma and drift Edition: 1. Instabilities in Silicon Power Devices: A Review of Failure Mechanisms in Modern Power Devices Article (PDF Available) in IEEE Industrial Electronics Magazine 8(3) September with

Abstract. Electrical instabilities in silicon-on-insulator (SOI) materials and devices during voltage and thermal stressing are fundamentally due to the movement and trapping of charge in the buried oxide (BOX), this being electrically the least robust part of the SOI by: 2. About this book Silicon is the most important material for the electronics industry. In modern microelectronics silicon devices like diodes and transistors play a major role, and devices like photodetectors or solar cells gain ever more importance. COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle coronavirus. Instabilities in Silicon Devices, Vol. 1: Silicon Passivation and Related Instabilities by Gerard Barbottin and a great selection of related books, art and collectibles available now at